STMicroelectronics STW Type N-Channel MOSFET, 56 A Enhancement, 3-Pin TO-247 STWA60N043DM9
- N° de stock RS:
- 275-1384
- Référence fabricant:
- STWA60N043DM9
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
9,55 €
(TVA exclue)
11,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 238 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 9,55 € |
| 5 - 9 | 9,36 € |
| 10 + | 6,97 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 275-1384
- Référence fabricant:
- STWA60N043DM9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Series | STW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Series STW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.
Fast recovery body diode
Worldwide best RDS per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
Liens connexes
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