STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247 STW75N65DM6-4
- N° de stock RS:
- 240-0612
- Référence fabricant:
- STW75N65DM6-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
12,29 €
(TVA exclue)
14,87 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 22 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 30 unité(s) expédiée(s) à partir du 25 mars 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 12,29 € |
| 5 - 9 | 12,28 € |
| 10 - 14 | 12,26 € |
| 15 - 19 | 12,24 € |
| 20 + | 12,23 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 240-0612
- Référence fabricant:
- STW75N65DM6-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-247 | |
| Series | STW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Power Dissipation Pd | 480W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL | |
| Length | 40.92mm | |
| Height | 5.1mm | |
| Width | 15.8 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-247 | ||
Series STW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Power Dissipation Pd 480W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL | ||
Length 40.92mm | ||
Height 5.1mm | ||
Width 15.8 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Liens connexes
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