STMicroelectronics STW Type N-Channel MOSFET, 92 A Enhancement, 4-Pin TO-247-4 STW65N023M9-4
- N° de stock RS:
- 275-1382
- Référence fabricant:
- STW65N023M9-4
- Fabricant:
- STMicroelectronics
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12,44 €
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15,05 €
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Unité | Prix par unité |
|---|---|
| 1 + | 12,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 275-1382
- Référence fabricant:
- STW65N023M9-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 92A | |
| Package Type | TO-247-4 | |
| Series | STW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 463W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.8 mm | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 92A | ||
Package Type TO-247-4 | ||
Series STW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 463W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 15.8 mm | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
Liens connexes
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