STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 4-Pin Hip-247
- N° de stock RS:
- 214-973
- Référence fabricant:
- SCTWA40N12G24AG
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
15,82 €
(TVA exclue)
19,14 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En voie de retrait du marché
- 30 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 + | 15,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-973
- Référence fabricant:
- SCTWA40N12G24AG
- Fabricant:
- STMicroelectronics
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA40N12G24AG | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 290W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.4V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA40N12G24AG | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 290W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.4V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency