Infineon IPT Type N-Channel Power MOSFET, 23 A, 0.82 V Enhancement, 8-Pin PG-HSOF-8
- N° de stock RS:
- 273-2796
- Référence fabricant:
- IPT60R022S7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
8,88 €
(TVA exclue)
10,74 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 18 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 8,88 € |
| 50 - 99 | 8,06 € |
| 100 - 249 | 7,39 € |
| 250 - 999 | 6,84 € |
| 1000 + | 6,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2796
- Référence fabricant:
- IPT60R022S7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 0.82V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 390W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 0.82V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 390W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a 600V CoolMOS SJ S7 power device. It enables the best price performance for low frequency switching applications. The CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
Total Pb free
RoHS compliant
Faster switching times
Easy visual inspection leads
Minimized conduction losses
More compact and easier design
Liens connexes
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