Infineon OptiMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin PG-TO263-3
- N° de stock RS:
- 273-2778
- Référence fabricant:
- IPB65R099CFD7AATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
4,55 €
(TVA exclue)
5,51 €
(TVA incluse)
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- Plus 96 unité(s) expédiée(s) à partir du 16 février 2026
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 4,55 € |
| 50 - 99 | 4,13 € |
| 100 - 249 | 3,79 € |
| 250 - 499 | 3,50 € |
| 500 + | 3,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2778
- Référence fabricant:
- IPB65R099CFD7AATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | OptiMOS | |
| Package Type | PG-TO263-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 127W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series OptiMOS | ||
Package Type PG-TO263-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 127W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a 650V CoolMOS CFD7A power device, It is a Infineon latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase shift full bridge and LLC.
Lower switching losses
High quality and reliability
100 percent avalanche tested
Optimized for higher battery voltages
Liens connexes
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