Infineon CoolGaN Power Transistor, 60 A, 600 V Enhancement, 20-Pin PG-DSO-20-85
- N° de stock RS:
- 273-2752
- Référence fabricant:
- IGO60R070D1AUMA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
10,19 €
(TVA exclue)
12,33 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 30 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 - 24 | 10,19 € |
| 25 - 49 | 9,25 € |
| 50 - 99 | 9,07 € |
| 100 - 249 | 8,48 € |
| 250 + | 7,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2752
- Référence fabricant:
- IGO60R070D1AUMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolGaN | |
| Package Type | PG-DSO-20-85 | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.5 V | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolGaN | ||
Package Type PG-DSO-20-85 | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.5 V | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.
Reduces EMI
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge
Liens connexes
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