Infineon CoolGaN Power Transistor, 15 A, 600 V Enhancement, 8-Pin PG-LSON-8-1 IGLD60R070D1AUMA3

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
273-2749
Référence fabricant:
IGLD60R070D1AUMA3
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

Power Transistor

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-LSON-8-1

Series

CoolGaN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-10 V

Typical Gate Charge Qg @ Vgs

5.8nC

Maximum Power Dissipation Pd

114W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Reduces EMI

System cost reduction savings

Capable of reverse conduction

Superior commutation ruggedness

Enables higher operating frequency

Low gate charge and low output charge

Liens connexes