Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1
- N° de stock RS:
- 762-901
- Référence fabricant:
- IGLT65R110B2AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,47 €
(TVA exclue)
7,83 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 800 unité(s) expédiée(s) à partir du 04 juin 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,47 € |
| 10 - 49 | 5,24 € |
| 50 - 99 | 4,01 € |
| 100 + | 3,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-901
- Référence fabricant:
- IGLT65R110B2AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolGaN | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Maximum Power Dissipation Pd | 55W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 1.61nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Width | 10.1mm | |
| Length | 10.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-16 | ||
Series CoolGaN | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -10V | ||
Maximum Power Dissipation Pd 55W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 1.61nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Width 10.1mm | ||
Length 10.3mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.
Optimized for soft switching operation
Dual‑gate for independent bi‑directional functionality
Superior performance
Versatile for diverse industrial applications
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