Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1
- N° de stock RS:
- 762-901
- Référence fabricant:
- IGLT65R110B2AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,47 €
(TVA exclue)
7,83 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,47 € |
| 10 - 49 | 5,24 € |
| 50 - 99 | 4,01 € |
| 100 + | 3,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-901
- Référence fabricant:
- IGLT65R110B2AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolGaN | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.61nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 55W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.3mm | |
| Width | 10.1mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolGaN | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.61nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 55W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs -10V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 10.3mm | ||
Width 10.1mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.
Optimized for soft switching operation
Dual‑gate for independent bi‑directional functionality
Superior performance
Versatile for diverse industrial applications
Liens connexes
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R140D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R080D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R055D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R110D2XUMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1
- Infineon IGLT65 Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R045D2ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R180CM8XTMA1