Vishay SIHB N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- N° de stock RS:
- 268-8291
- Référence fabricant:
- SIHB085N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
199,00 €
(TVA exclue)
241,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 3,98 € | 199,00 € |
| 100 - 450 | 3,255 € | 162,75 € |
| 500 - 950 | 2,77 € | 138,50 € |
| 1000 + | 2,698 € | 134,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8291
- Référence fabricant:
- SIHB085N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
Vishay SIHB Series MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHB085N60EF-GE3
This MOSFET is a high-voltage N-channel semiconductor device designed for power switching in surface-mount applications. It operates across a wide ambient temperature range and is suited to circuits requiring substantial drain current and elevated drain-source voltage capability. The component is supplied in a TO-263 package for thermal management on PCB-mounted power stages.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 34A continuous drain current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 63nC total gate charge allows predictable gate-drive design
• 184W power dissipation assists high-power-density layouts
• Vgs 30V limit accommodates robust gate-voltage margins
• 34A continuous drain current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 63nC total gate charge allows predictable gate-drive design
• 184W power dissipation assists high-power-density layouts
• Vgs 30V limit accommodates robust gate-voltage margins
Applications
• Ideal for power converters in industrial supplies
• Suitable for high-voltage inverter switching stages
• Used for motor-drive front-end switching transistors
• Can be used for telecoms power-rail regulation
• Recommended for switched-mode power supply primary switches
• Suitable for high-voltage inverter switching stages
• Used for motor-drive front-end switching transistors
• Can be used for telecoms power-rail regulation
• Recommended for switched-mode power supply primary switches
What package advantages assist PCB thermal design?
The TO-263 surface-mount format offers a large thermal pad and metal tab area to improve heat transfer to the board and external heatsinking arrangements.
How does gate charge affect drive circuitry selection?
The 63nC gate charge determines required driver current and switching losses
gate drivers must source and sink sufficient current for desired transition speeds to balance efficiency and EMI.
What temperature range can it withstand during operation?
The device is specified to operate from -55°C up to 150°C junction or ambient conditions as defined by system cooling, enabling use in harsh thermal environments.
Are there any regulatory restrictions noted for use?
The component complies with RoHS directives, indicating it meets restricted-substance requirements for electronic assemblies.
Liens connexes
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB240N65E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T5-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SiH N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SO-8 SIHH068N60E-T1-GE3
- Vishay S N channel-Channel MOSFET 650 V N, 3-Pin TO-263 SIHB135N65S-GE3