Microchip Type N-Channel MOSFET, 4 A, 400 V MOSFET, 3-Pin TO-252 TN2640K4-G
- N° de stock RS:
- 264-8923
- Référence fabricant:
- TN2640K4-G
- Fabricant:
- Microchip
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
5,27 €
(TVA exclue)
6,376 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 840 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 2,635 € | 5,27 € |
| 50 - 98 | 2,21 € | 4,42 € |
| 100 - 248 | 1,98 € | 3,96 € |
| 250 - 998 | 1,945 € | 3,89 € |
| 1000 + | 1,91 € | 3,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-8923
- Référence fabricant:
- TN2640K4-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 0.36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 0.36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
- Microchip Type N-Channel MOSFET 400 V MOSFET, 3-Pin TO-252
- Microchip DN2625 Type N-Channel MOSFET 3-Pin TO-252 DN2625K4-G
- Microchip DN2470 Type N-Channel RF MOSFET 700 V Depletion, 3-Pin TO-252 DN2470K4-G
- Microchip TN2540 Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-243 TN2540N8-G
- Microchip DN2540 Type N-Channel MOSFET 400 V Depletion, 3-Pin TO-243 DN2540N8-G
- Microchip DN2540 Type N-Channel MOSFET 400 V Depletion, 3-Pin TO-220 DN2540N5-G
- Microchip DN2540 Type N-Channel MOSFET 400 V Depletion, 3-Pin TO-92 DN2540N3-G
- Microchip TN2540 Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-92 TN2540N3-G