Microchip TN0606 Type N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin TO-92 TN0606N3-G
- N° de stock RS:
- 264-8910
- Référence fabricant:
- TN0606N3-G
- Fabricant:
- Microchip
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
9,30 €
(TVA exclue)
11,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 680 unité(s) expédiée(s) à partir du 02 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,93 € | 9,30 € |
| 50 - 90 | 0,785 € | 7,85 € |
| 100 - 240 | 0,704 € | 7,04 € |
| 250 - 490 | 0,691 € | 6,91 € |
| 500 + | 0,677 € | 6,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-8910
- Référence fabricant:
- TN0606N3-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | TN0606 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series TN0606 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
2V maximum low threshold
High input impedance
100pF typical low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
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