Microchip VN10K Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92 VN10KN3-G

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10,975 €

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13,275 €

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le paquet*
25 - 750,439 €10,98 €
100 +0,408 €10,20 €

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N° de stock RS:
177-9716
Référence fabricant:
VN10KN3-G
Fabricant:
Microchip
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Marque

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

310mA

Maximum Drain Source Voltage Vds

60V

Series

VN10K

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1W

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

5.33mm

Width

4.06 mm

Length

5.08mm

Distrelec Product Id

304-38-572

Automotive Standard

No

Microchip Technology MOSFET


The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 5ohms at a gate-source voltage of 10V. It has a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has continuous drain current of 310mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this transistor are 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) transistor that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications


• Amplifiers

• Converters

• Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

• Motor controls

• Power supply circuits

• Switches

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC

Liens connexes