STMicroelectronics Type N-Channel MOSFET, 10 A, 800 V Enhancement, 7-Pin Tape & Reel SCT040HU65G3AG
- N° de stock RS:
- 261-5040
- Référence fabricant:
- SCT040HU65G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
12,31 €
(TVA exclue)
14,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 207 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 12,31 € |
| 10 - 99 | 11,69 € |
| 100 - 249 | 11,11 € |
| 250 - 499 | 10,55 € |
| 500 + | 10,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 261-5040
- Référence fabricant:
- SCT040HU65G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.5mm | |
| Length | 18.58mm | |
| Standards/Approvals | No | |
| Width | 14 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 3.5mm | ||
Length 18.58mm | ||
Standards/Approvals No | ||
Width 14 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Liens connexes
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