STMicroelectronics Type N-Channel MOSFET, 10 A, 800 V Enhancement Tape & Reel STD80N450K6
- N° de stock RS:
- 261-5045
- Référence fabricant:
- STD80N450K6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
3,67 €
(TVA exclue)
4,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 218 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,67 € |
| 10 - 99 | 3,49 € |
| 100 - 249 | 3,31 € |
| 250 - 499 | 3,14 € |
| 500 + | 2,99 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 261-5045
- Référence fabricant:
- STD80N450K6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100 percentage avalanche tested
Zener-protected
Liens connexes
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