Infineon BSS N-Channel MOSFET, 90 mA, 600 V Enhancement, 3-Pin SOT-89 BSS225H6327FTSA1

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Sous-total (1 bobine de 1000 unités)*

247,00 €

(TVA exclue)

299,00 €

(TVA incluse)

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  • Expédition à partir du 03 mai 2027
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Prix par unité
la bobine*
1000 - 10000,247 €247,00 €
2000 - 40000,24 €240,00 €
5000 +0,23 €230,00 €

*Prix donné à titre indicatif

N° de stock RS:
260-5076
Référence fabricant:
BSS225H6327FTSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-89

Series

BSS

Pin Count

3

Maximum Drain Source Resistance Rds

45Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon BSS Series MOSFET, 600V Maximum Drain-Source Voltage, 0.09A Maximum Continuous Drain Current - BSS225H6327FTSA1


This MOSFET is an enhancement-mode N-channel transistor designed for high-voltage, low-current switching in Compact SOT-89 packages. It operates across a wide temperature span suitable for demanding environments and meets automotive qualification standards while adhering to RoHS environmental requirements.

Features and Benefits:


• 600V maximum drain-source voltage enables high-voltage switching capability
• 45 Ω maximum drain-source resistance limits leakage in the off state
• 0.09A continuous drain current supports low-current control circuits
• -55°C to 150°C operating range permits use in extreme temperatures
• SOT-89 package reduces board footprint for Compact layouts

Applications


• Suitable for low-current automotive control circuits
• Ideal for high-voltage signal switching
• Used with industrial sensors needing wide temperature tolerance
• Can be used for Compact power-management modules
• Suitable for designs requiring automotive-grade components

What package type is used and why is it relevant?


It uses a SOT-89 package which offers a small footprint and a thermal path suitable for low-power, high-voltage transistor implementations.

How does the device perform in automotive environments?


It meets AEC-Q101 qualification and operates across a broad temperature range appropriate for vehicle electronics.

What channel configuration and mode does it use?


The device is N-channel and arranged in enhancement mode, providing controllable conduction when driven.

Is the component compliant with environmental directives?


It conforms to RoHS requirements, indicating restriction of certain hazardous substances in its construction.

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