Infineon IPP Type N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220 IPP60R065S7XKSA1
- N° de stock RS:
- 260-1218
- Référence fabricant:
- IPP60R065S7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
4,49 €
(TVA exclue)
5,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 403 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,49 € |
| 10 - 24 | 4,26 € |
| 25 - 49 | 4,09 € |
| 50 - 99 | 3,90 € |
| 100 + | 3,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 260-1218
- Référence fabricant:
- IPP60R065S7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 9.45 mm | |
| Length | 10.36mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 9.45 mm | ||
Length 10.36mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
Liens connexes
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R160P7XKSA1
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R040S7XKSA1
- Infineon IPP Type N-Channel MOSFET, 84 A TO-220
- Infineon IPP Type N-Channel MOSFET, 84 A TO-220 IPP120N20NFDAKSA1
- Infineon IPP Type N-Channel MOSFET 500 V TO-220
