Infineon IPP Type N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220
- N° de stock RS:
- 258-3894
- Référence fabricant:
- IPP60R160P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
84,90 €
(TVA exclue)
102,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 150 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,698 € | 84,90 € |
| 100 - 200 | 1,528 € | 76,40 € |
| 250 + | 1,443 € | 72,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3894
- Référence fabricant:
- IPP60R160P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS P7 super junction MOSFET is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge of the CoolMOS 7th generation platform ensure its high efficiency.
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Liens connexes
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R160P7XKSA1
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R065S7XKSA1
- Infineon IPP Type N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R040S7XKSA1
- Infineon IPP Type N-Channel MOSFET, 84 A TO-220
- Infineon IPP Type N-Channel MOSFET, 84 A TO-220 IPP120N20NFDAKSA1
- Infineon IPP Type N-Channel MOSFET 500 V TO-220