Infineon IPP Type N-Channel MOSFET, 9.9 A, 500 V TO-220
- N° de stock RS:
- 259-1560
- Référence fabricant:
- IPP50R380CEXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
31,20 €
(TVA exclue)
37,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,624 € | 31,20 € |
| 100 - 200 | 0,593 € | 29,65 € |
| 250 - 450 | 0,568 € | 28,40 € |
| 500 - 1200 | 0,53 € | 26,50 € |
| 1250 + | 0,499 € | 24,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 259-1560
- Référence fabricant:
- IPP50R380CEXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Series MOSFET, 14.1A Maximum Continuous Drain Current, 98W Maximum Power Dissipation - IPP50R380CEXKSA1
This MOSFET is tailored for high-voltage power applications, focusing on efficiency and dependability. Incorporating CoolMOS™ technology, it improves switching performance while minimising losses, making it advantageous for various industrial applications and significantly enhancing energy management.
Features & Benefits
• Low Rds(on) reduces conduction losses, which contributes to efficiency
• High continuous drain current rating accommodates rigorous applications
• Simplifies integration into existing systems due to easy drivability
• Flexible gate threshold voltage broadens compatibility with different circuits
• Sturdy package design ensures durability in challenging environments
Applications
• Suitable for power factor correction (PFC) stages
• Works well in hard-switching PWM stages
• Applicable in resonant switching for LCD and PDP televisions
• Effective in lighting for efficient power management
• Utilised in power supplies for PCs and automation systems
What is the optimal gate-source voltage for operation?
The MOSFET functions effectively with a maximum gate-source voltage of ±30 V, optimising control across various applications.
How does this component perform in thermal environments?
With a maximum power dissipation of 98 W, it operates efficiently between -55°C and +150°C, making it suitable for a range of thermal conditions.
Can this component handle pulsed currents?
It can manage pulse currents up to 32.4A, supporting transient conditions competently without compromising performance.
What advantages does the superjunction technology provide?
Superjunction technology lowers both switching and conduction losses, enhancing overall efficiency and extending device lifespan in applications.
Liens connexes
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