Infineon SPD15P10P Type P-Channel MOSFET, 4 A, 100 V Enhancement, 3-Pin TO-252 SPD04P10PGBTMA1
- N° de stock RS:
- 258-4034
- Référence fabricant:
- SPD04P10PGBTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
3,52 €
(TVA exclue)
4,26 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 490 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,704 € | 3,52 € |
| 50 - 120 | 0,624 € | 3,12 € |
| 125 - 245 | 0,584 € | 2,92 € |
| 250 - 495 | 0,542 € | 2,71 € |
| 500 + | 0,506 € | 2,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-4034
- Référence fabricant:
- SPD04P10PGBTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | SPD15P10P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -10 V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series SPD15P10P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -10 V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon P-channel power MOSFET is highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Enhancement mode
Avalanche rated
Pb-free lead plating; RoHS compliant
Liens connexes
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