Infineon IPD Type N-Channel MOSFET, 4.5 A, 650 V N TO-252

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N° de stock RS:
258-3855
Référence fabricant:
IPD60R2K0PFD7SAUMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

650V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 2,000mOhm leading to low switching losses. An implemented fast body diode secures a robust device and in turn reduced bill-of material for the customer. Additionally, our industry-leading SMD package offering contributes to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low power motor drives.

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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