Infineon IPD Type P-Channel MOSFET, 42 A, 650 V N TO-252

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 2500 unités)*

1 375,00 €

(TVA exclue)

1 675,00 €

(TVA incluse)

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  • Expédition à partir du 14 mai 2026
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Unité
Prix par unité
la bobine*
2500 +0,55 €1 375,00 €

*Prix donné à titre indicatif

N° de stock RS:
258-3851
Référence fabricant:
IPD60R210PFD7SAUMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The 600V CoolMOS PFD7 super junction MOSFET in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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