Infineon iPB Type N-Channel MOSFET, 166 A, 80 V N, 3-Pin TO-263
- N° de stock RS:
- 258-3788
- Référence fabricant:
- IPB024N08N5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
1 429,00 €
(TVA exclue)
1 729,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,429 € | 1 429,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3788
- Référence fabricant:
- IPB024N08N5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 166A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.92V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 166A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.92V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
Liens connexes
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