Infineon IPA Type N-Channel MOSFET, 4.5 A, 800 V N, 3-Pin TO-220 IPA80R650CEXKSA2
- N° de stock RS:
- 258-3778
- Référence fabricant:
- IPA80R650CEXKSA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
4,56 €
(TVA exclue)
5,52 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 492 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,28 € | 4,56 € |
| 20 - 48 | 2,075 € | 4,15 € |
| 50 - 98 | 1,94 € | 3,88 € |
| 100 - 198 | 1,80 € | 3,60 € |
| 200 + | 1,66 € | 3,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3778
- Référence fabricant:
- IPA80R650CEXKSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPA | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPA | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS CE is high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading super junction MOSFET supplier with best-in-class innovation.
Low specific on-state resistance
Very low energy storage in output capacitance @ 400V
High reliability
Ease-of-use
Liens connexes
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