Infineon IPA Type N-Channel MOSFET, 5.7 A, 800 V N, 3-Pin TO-220 IPA80R1K0CEXKSA2
- N° de stock RS:
- 258-3776
- Référence fabricant:
- IPA80R1K0CEXKSA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
4,13 €
(TVA exclue)
4,998 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 494 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,065 € | 4,13 € |
| 20 - 48 | 1,965 € | 3,93 € |
| 50 - 98 | 1,88 € | 3,76 € |
| 100 - 198 | 1,79 € | 3,58 € |
| 200 + | 1,67 € | 3,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3776
- Référence fabricant:
- IPA80R1K0CEXKSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPA | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPA | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS CE is high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading super junction MOSFET supplier with best-in-class innovation.
Low specific on-state resistance
Very low energy storage in output capacitance @ 400V
High reliability
Ease-of-use
Liens connexes
- Infineon MOSFET 800 V PG-TO 220 FullPAK IPA80R1K0CEXKSA2
- Infineon MOSFET Transistor, 10.1 A PG-TO 220 FullPAK IPA65R650CEXKSA1
- Infineon MOSFET Transistor, 14.7 A PG-TO 220 FullPAK IPA60R400CEXKSA1
- Infineon MOSFET Transistor, 14.1 A PG-TO 220 FullPAK IPA50R380CEXKSA2
- Infineon MOSFET Transistor, 24.8 A PG-TO 220 FullPAK IPA50R190CEXKSA2
- Infineon N-Channel MOSFET 600 V PG-TO 220 FullPAK IPA60R280P6XKSA1
- Infineon MOSFET 800 V PG-TO 220 IPA80R650CEXKSA2
- Infineon MOSFET, 800 V PG-TO220 SPA11N80C3XKSA2
