Infineon IPA Type N-Channel MOSFET, 5.7 A, 800 V N, 3-Pin TO-220
- N° de stock RS:
- 258-3775
- Référence fabricant:
- IPA80R1K0CEXKSA2
- Fabricant:
- Infineon
Sous-total (1 tube de 50 unités)*
68,15 €
(TVA exclue)
82,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 450 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 1,363 € | 68,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3775
- Référence fabricant:
- IPA80R1K0CEXKSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPA | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 32W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPA | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 32W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS CE is high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading super junction MOSFET supplier with best-in-class innovation.
Low specific on-state resistance
Very low energy storage in output capacitance @ 400V
High reliability
Ease-of-use
Liens connexes
- Infineon IPA Type N-Channel MOSFET 800 V N, 3-Pin TO-220 IPA80R1K0CEXKSA2
- Infineon IPA Type N-Channel MOSFET 800 V N, 3-Pin TO-220
- Infineon IPA Type N-Channel MOSFET 800 V N, 3-Pin TO-220 IPA80R650CEXKSA2
- Infineon IPA Type N-Channel MOSFET, 10.1 A N TO-220
- Infineon IPA Type N-Channel MOSFET, 14.1 A N TO-220
- Infineon IPA Type N-Channel MOSFET, 9.9 A N TO-220
- Infineon IPA Type N-Channel MOSFET, 14.1 A N TO-220 IPA50R380CEXKSA2
- Infineon IPA Type N-Channel MOSFET, 9.9 A N TO-220 IPA65R650CEXKSA1
