Références fabricant

Infineon BSZ Type P, Type N-Channel MOSFET, 5.1 A, 20 V Dual, 8-Pin TSDSON BSZ215CHXTMA1

N° de stock RS:: 258-0721
Référence fabricant:: BSZ215CHXTMA1
Fabricant:: Infineon

Infineon BSZ Type P, Type N-Channel MOSFET, 5.1 A, 20 V Dual, 8-Pin TSDSON BSZ215CHXTMA1

Sous-total (1 paquet de 2 unités)*

2,74 €

(TVA exclue)

3,32 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 4 750 unité(s) expédiée(s) à partir du 03 novembre 2026

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Unité	Prix par unité	le paquet*
2 +	1,37 €	2,74 €

*Prix donné à titre indicatif

N° de stock RS:: 258-0721
Référence fabricant:: BSZ215CHXTMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.1A
	Maximum Drain Source Voltage Vds	20V
	Package Type	TSDSON
	Series	BSZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Dual
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	700mV
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.1A
	Maximum Drain Source Voltage Vds 20V
	Package Type TSDSON
	Series BSZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Dual
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 700mV
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ215CHXTMA1

Infineon BSZ Series MOSFET, 20V Maximum Drain-Source Voltage, 5.1A Maximum Continuous Drain Current - BSZ215CHXTMA1

This dual-channel MOSFET combines P- and N-channel elements in a Compact surface-mount package for power switching and management tasks. Designed for board-level assembly, it operates across a wide temperature span and is suitable for applications where both polarity channels are required in a single device while adhering to RoHS directives.

Features and Benefits:

• Low drain-source resistance reduces conduction losses
• Dual-channel arrangement enables complementary switching functions
• TSDSON 8-pin surface-mount eases high-density PCB placement
• 0.7V forward voltage minimises gate-drive overhead
• Wide temperature tolerance supports harsh thermal environments

Applications

• Suitable for DC power distribution modules in Compact systems
• Ideal for complementary half-bridge arrangements on single boards
• Used for gate-driver and load-switching in control electronics
• Can be used for thermally stable designs operating in extremes

What is the maximum ambient temperature range it can handle?

It is specified to operate up to a maximum temperature of +175°C.

How does the device support low-loss switching?

The device features a maximum drain-source resistance of 150mΩ which lowers conduction losses during high-current operation.

What pin count and mounting style should designers expect?

The component is provided in an 8-pin TSDSON package configured for surface mounting.

Are both channel polarities available in the same package?

Yes, the component integrates both P-channel and N-channel MOSFETs for complementary circuit designs.

Is the device suited to automotive specification requirements?

It is not designated as an automotive-standard part but is compliant with RoHS environmental restrictions.

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