Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON
- N° de stock RS:
- 258-0709
- Référence fabricant:
- BSZ018N04LS6ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
3 685,00 €
(TVA exclue)
4 460,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 septembre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,737 € | 3 685,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0709
- Référence fabricant:
- BSZ018N04LS6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
Liens connexes
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1
- Infineon BSZ Type N-Channel MOSFET 80 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 25 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 30 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 30 V N, 8-Pin TSDSON BSZ019N03LSATMA1
- Infineon BSZ Type N-Channel MOSFET 25 V N, 8-Pin TSDSON BSZ036NE2LSATMA1
- Infineon BSZ Type N-Channel MOSFET 80 V N, 8-Pin TSDSON BSZ084N08NS5ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin TSDSON-8 FL