Infineon BSD Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 6-Pin SOT-363
- N° de stock RS:
- 258-0698
- Référence fabricant:
- BSD316SNH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
210,00 €
(TVA exclue)
240,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 15 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,07 € | 210,00 € |
| 6000 - 12000 | 0,067 € | 201,00 € |
| 15000 + | 0,064 € | 192,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0698
- Référence fabricant:
- BSD316SNH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSD | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSD | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Height 0.9mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon N-channel small signal MOSFET automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Low RDS(on) provides higher efficiency and extends battery life
Small packages save PCB space
Best-in-class quality and reliability
Liens connexes
- Infineon N-Channel MOSFET 30 V PG-SOT363 BSD316SNH6327XTSA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 IPD30N03S2L20ATMA1
- Infineon N-Channel MOSFET 60 V PG-TO252 IPD220N06L3GATMA1
- Infineon P-Channel MOSFET 30 V PG-TO252 IPD068P03L3GATMA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 BSC0503NSIATMA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 BSC050N03LSGATMA1
- Infineon N-Channel MOSFET 30 V PG-TO263-7 IPD060N03LGATMA1
- Infineon N-Channel MOSFET 30 V PG-TO252-3 BSO220N03MDGXUMA1