Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON

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N° de stock RS:
258-0696
Référence fabricant:
BSC120N12LSGATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

120V

Series

BSC

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.2mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

114W

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.87V

Maximum Operating Temperature

150°C

Length

5.49mm

Standards/Approvals

IEC 61249-2-21, RoHS

Height

1.1mm

Width

6.35 mm

Automotive Standard

No

The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Low gate charge

Lower output charge

Logic level compatibility

Higher power density designs

Higher switching frequency

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