Infineon HEXFET N-Channel MOSFET, 22 A, 20 V Enhancement PQFN IRLHS6242TRPBF
- N° de stock RS:
- 257-9445
- Numéro d'article Distrelec:
- 304-40-550
- Référence fabricant:
- IRLHS6242TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
7,44 €
(TVA exclue)
9,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 810 unité(s) expédiée(s) à partir du 31 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,744 € | 7,44 € |
| 100 - 240 | 0,704 € | 7,04 € |
| 250 - 490 | 0,692 € | 6,92 € |
| 500 - 990 | 0,448 € | 4,48 € |
| 1000 + | 0,334 € | 3,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-9445
- Numéro d'article Distrelec:
- 304-40-550
- Référence fabricant:
- IRLHS6242TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 11.70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 9.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 11.70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 9.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 20V Maximum Drain‑Source Voltage, 22A Maximum Continuous Drain Current - IRLHS6242TRPBF
This MOSFET is a through‑hole enhancement‑mode N‑channel device designed for switching and power‑control tasks. It operates across a wide ambient range and is suited to environments where Compact packaging and appreciable continuous current are required. Key electrical limits and thermal characteristics support integration into assemblies that demand controlled gate drive and moderate power dissipation.
Features and Benefits:
• Low conduction resistance delivers reduced conduction losses
• High continuous current handles heavier load currents
• Moderate gate charge enables reasonably quick switching
• Wide operating temperature range supports harsh environments
• Controlled gate voltage rating protects against drive overvoltage
• High continuous current handles heavier load currents
• Moderate gate charge enables reasonably quick switching
• Wide operating temperature range supports harsh environments
• Controlled gate voltage rating protects against drive overvoltage
Applications
• Suitable for mid‑voltage DC switching and load control
• Ideal for power‑stage components in industrial supplies
• Used with motor‑drive circuits requiring 22A capability
• Can be used for battery management and protection systems
• Appropriate for Compact power converters in PQFN packages
• Ideal for power‑stage components in industrial supplies
• Used with motor‑drive circuits requiring 22A capability
• Can be used for battery management and protection systems
• Appropriate for Compact power converters in PQFN packages
What thermal performance should be expected under load?
It dissipates up to 9.6W, so thermal management such as heatsinking or airflow is required to maintain junction temperatures.
What gate‑drive limits must be observed during design?
The gate‑source voltage must not exceed 12V to avoid overvoltage stress on the input‑gate structure.
How does the device behave across temperature extremes?
It is specified to operate from -55°C to 150°C, allowing use in applications with wide ambient temperature swings.
What are the switching characteristics relevant to transient design?
The typical total gate charge is 14 nC at rated gate‑drive conditions, informing gate‑driver sizing and switching‑loss calculations.
Is this device compliant with common environmental directives?
It meets RoHS criteria, indicating the absence of restricted hazardous substances in its construction.
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