Infineon HEXFET Type N-Channel MOSFET, -160 A, -30 V DirectFET IRF9383MTRPBF
- N° de stock RS:
- 257-9333
- Référence fabricant:
- IRF9383MTRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 2 unités)*
3,73 €
(TVA exclue)
4,514 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 1,865 € | 3,73 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-9333
- Référence fabricant:
- IRF9383MTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -160A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 113W | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -160A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 113W | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V single p channel strong IRFET power mosfet in a direct FET mx package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
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