Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3
- N° de stock RS:
- 256-7413
- Référence fabricant:
- SIHB24N65E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,95 €
(TVA exclue)
7,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,95 € |
| 10 - 24 | 5,36 € |
| 25 - 99 | 5,08 € |
| 100 - 499 | 4,48 € |
| 500 + | 3,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7413
- Référence fabricant:
- SIHB24N65E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHB24N65E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in electronic and industrial systems. It operates across a broad temperature range and is supplied in a surface-mount TO-263 package suitable for integration onto populated assemblies where elevated voltage handling is required.
Features and Benefits:
• 650V maximum drain-source voltage enabling high-voltage switching
• 24A continuous drain current supporting substantial load handling
• 0.145Ω Rds(on) reducing conduction losses in power paths
• 250W power dissipation allowing sustained thermal load
• 122nC typical gate charge for predictable gate-drive requirements
• 30V gate-source rating providing wide gate-drive margin
• 24A continuous drain current supporting substantial load handling
• 0.145Ω Rds(on) reducing conduction losses in power paths
• 250W power dissipation allowing sustained thermal load
• 122nC typical gate charge for predictable gate-drive requirements
• 30V gate-source rating providing wide gate-drive margin
Applications
• Suitable for SMPS primary-side switching in high-voltage supplies
• Ideal for industrial motor drive front-end switches
• Used for high-voltage DC-DC conversion in automation systems
• Can be used for power-stage switches in welding or heating controllers
• Ideal for industrial motor drive front-end switches
• Used for high-voltage DC-DC conversion in automation systems
• Can be used for power-stage switches in welding or heating controllers
What thermal limits should I consider for heavy-duty operation?
The device is rated to operate up to +150°C junction temperature and down to -55°C, so thermal management such as appropriate heatsinking or PCB copper area is required to maintain safe junction temperatures at high power dissipation.
How does the gate charge affect drive circuitry selection?
With a typical gate charge of 122nC at the specified gate voltage, drive circuits must source and sink sufficient current to achieve the required switching speed while considering switching losses and driver power capability.
What mounting considerations are needed for assembly reliability?
It is provided in a TO-263 surface-mount package with three pins, so standard reflow soldering processes and correct pad design should be used to ensure mechanical and thermal connection.
Which environmental or regulatory attribute is included?
The component conforms to RoHS requirements, indicating it meets the specified restrictions on hazardous substances.
Liens connexes
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