Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

N° de stock RS:: 256-7362
Référence fabricant:: SI4948BEY-T1-E3
Fabricant:: Vishay

Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

Sous-total (1 bobine de 2500 unités)*

1 242,50 €

(TVA exclue)

1 502,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 14 décembre 2026

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Unité	Prix par unité	la bobine*
2500 +	0,497 €	1 242,50 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7362
Référence fabricant:: SI4948BEY-T1-E3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-2.4A
	Maximum Drain Source Voltage Vds	-60V
	Package Type	SOIC
	Series	Si4948BEY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.15Ω
	Typical Gate Charge Qg @ Vgs	14.5nC
	Maximum Power Dissipation Pd	1.4W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Height	1.75mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -2.4A
	Maximum Drain Source Voltage Vds -60V
	Package Type SOIC
	Series Si4948BEY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.15Ω
	Typical Gate Charge Qg @ Vgs 14.5nC
	Maximum Power Dissipation Pd 1.4W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Height 1.75mm
	Automotive Standard No

Datasheet - SI4948BEY-T1-E3

Vishay Si4948BEY Series MOSFET, 60V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - SI4948BEY-T1-E3

This p-channel MOSFET is a surface-mount transistor designed for switching and analogue functions in compact electronic assemblies. It is intended for applications requiring moderate current handling and voltage blocking within a semiconductor package that mounts directly to the circuit board. The device operates across a wide temperature span and complies with common electronic material standards, making it suitable for use in demanding thermal environments.

Features and Benefits:

• Low on-resistance 0.15Ω enabling reduced conduction losses
• Blocking capability 60V for medium-voltage switching
• Continuous drain current 2.4A for sustained load handling
• Gate drive tolerance 20V allowing flexible control voltages
• Typical gate charge 14.5nC for predictable switching behaviour
• Power dissipation 1.4W supporting moderate thermal loads

Applications

• Suitable for power-rail load switching in consumer electronics
• Ideal for reverse-polarity or high-side switch implementations
• Used with compact DC-DC converters in space-limited boards
• Can be used for battery protection and energy-management circuits
• Suitable for signal-level power control in industrial modules

What package and pin count should I plan for on the PCB?

The component comes in an 8-pin SOIC package intended for surface mounting, so footprint design should match standard 8-pin SOIC land patterns for reliable solder joints.

How does it perform across temperature extremes?

It is rated to operate from -55°C up to 175°C, permitting use in assemblies that experience elevated junction temperatures or cold-start conditions.

Which forward voltage characteristic is relevant for circuit margin calculations?

The device exhibits a forward voltage of -1.2V under conditions relevant to its conduction path, which can be used when estimating voltage drops in power paths.

Are there material or environmental standards applicable to procurement?

The part conforms to RoHS 2002/95/EC and follows IEC 61249-2-21 guidelines for relevant material and composition considerations.