Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

N° de stock RS:: 256-7362
Référence fabricant:: SI4948BEY-T1-E3
Fabricant:: Vishay

Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

Sous-total (1 bobine de 2500 unités)*

1 242,50 €

(TVA exclue)

1 502,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 12 octobre 2026

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Unité	Prix par unité	la bobine*
2500 +	0,497 €	1 242,50 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7362
Référence fabricant:: SI4948BEY-T1-E3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-2.4A
	Maximum Drain Source Voltage Vds	-60V
	Package Type	SOIC
	Series	Si4948BEY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.15Ω
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	14.5nC
	Maximum Power Dissipation Pd	1.4W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	1.75mm
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -2.4A
	Maximum Drain Source Voltage Vds -60V
	Package Type SOIC
	Series Si4948BEY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.15Ω
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 14.5nC
	Maximum Power Dissipation Pd 1.4W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 1.75mm
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Automotive Standard No

Datasheet - SI4948BEY-T1-E3

Vishay Si4948BEY Series MOSFET, -60V Drain Source Voltage, -2.4A Continuous Drain Current - SI4948BEY-T1-E3

This MOSFET is a P‑channel surface‑mount transistor designed for switching and power‑control tasks in electronic systems. It operates within a wide temperature envelope and is intended for use on Compact boards where an SOIC package and moderate power handling are required. The device suits engineers needing a P‑channel option with specific gate charge and thermal limits for circuit‑level design.

Features and Benefits:

• P‑channel device supporting negative drain‑source voltage for high‑side switching • Rated drain‑source voltage of -60V enabling elevated voltage applications • Maximum continuous drain current -2.4A allowing moderate load handling • Low on‑resistance 0.15Ω reducing conduction losses • Typical gate charge 14.5nC facilitating predictable switching behaviour • Power dissipation 1.4W managing thermal budget in confined layouts

Applications

• Suitable for high‑side switches in motor control modules • Ideal for load disconnects in power management circuits • Used for reverse polarity protection in supply rails • Can be used for battery management and charging control • Suitable for SMD assemblies requiring Compact P‑channel transistors

What gate voltage limits should be observed during design?

The gate‑source voltage must not exceed ±20V to prevent gate oxide stress and ensure reliable operation.

How does the device behave at elevated temperatures?

It is specified to operate up to 175°C maximum, so designers should account for derating of current and power with temperature rise.

What package and pin count are available for PCB layout considerations?

The component is supplied in an SOIC‑8 package with eight pins, suitable for standard SMD footprint designs.

Which standards relate to material and process acceptability?

The component complies with RoHS 2002/95/EC and follows IEC 61249‑2‑21 material specifications.

What forward voltage or body diode characteristic is indicated?

A forward voltage of -1.2V is specified for the intrinsic diode conduction behaviour.