Vishay Type N-Channel MOSFET, 118 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJ184EP-T1_GE3
- N° de stock RS:
- 252-0307
- Référence fabricant:
- SQJ184EP-T1_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
6,86 €
(TVA exclue)
8,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,372 € | 6,86 € |
| 50 - 245 | 1,288 € | 6,44 € |
| 250 - 495 | 1,168 € | 5,84 € |
| 500 - 1245 | 1,096 € | 5,48 € |
| 1250 + | 1,03 € | 5,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0307
- Référence fabricant:
- SQJ184EP-T1_GE3
- Fabricant:
- Vishay
Spécifications
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 118A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.04mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 118A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.04mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
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