Infineon BSS Type N-Channel MOSFET, 170 mA, 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1
- N° de stock RS:
- 250-0550
- Référence fabricant:
- BSS169H6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
417,00 €
(TVA exclue)
504,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 6 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,139 € | 417,00 € |
| 6000 - 6000 | 0,132 € | 396,00 € |
| 9000 + | 0,124 € | 372,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0550
- Référence fabricant:
- BSS169H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12000mΩ | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12000mΩ | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 100V Drain-Source Voltage, 0.17A Continuous Drain Current - BSS169H6327XTSA1
This MOSFET is a depletion‑mode N‑channel transistor in a Compact surface‑mount package designed for control and switching in constrained assemblies. It operates across a wide ambient range and is suitable for electrically demanding environments where thermal endurance and low‑voltage gate control are required. The device is RoHS‑compliant and meets an automotive qualification for use in vehicle electronics.
Features and Benefits:
• Depletion channel allows normally‑on operation for fail‑safe circuits
• Wide temperature tolerance enables operation from -55°C to +150°C
• Low continuous current supports precision low‑current control
• High voltage rating protects against transients up to 100V
• SOT‑23 package provides Compact surface‑mount assembly
• Wide temperature tolerance enables operation from -55°C to +150°C
• Low continuous current supports precision low‑current control
• High voltage rating protects against transients up to 100V
• SOT‑23 package provides Compact surface‑mount assembly
Applications
• Ideal for analogue biasing and level‑shift networks
• Suitable for small‑signal load switching in control modules
• Used with sensor interfaces requiring normally‑on behaviour
• Can be used for automotive ancillary circuitry conforming to AEC‑Q101
• Suitable for Compact power‑management subcircuits
• Suitable for small‑signal load switching in control modules
• Used with sensor interfaces requiring normally‑on behaviour
• Can be used for automotive ancillary circuitry conforming to AEC‑Q101
• Suitable for Compact power‑management subcircuits
What is the maximum gate‑to‑source voltage the device can accept?
It tolerates up to 20V between gate and source.
How much power can it dissipate during operation?
The device has a maximum power dissipation of 81W.
What gate charge should designers budget for at Vgs?
Typical total gate charge is 80 nC measured at the specified gate drive.
What is the on‑resistance characteristic relevant for thermal planning?
The maximum drain-source resistance is 12 000mΩ under specified conditions.
Is this device packaged for automated PCB assembly?
Yes, it is supplied in a SOT‑23 surface‑mount package.
Liens connexes
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