Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 249-6905
- Référence fabricant:
- IPB80N08S2L07ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
2 486,00 €
(TVA exclue)
3 008,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 2,486 € | 2 486,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-6905
- Référence fabricant:
- IPB80N08S2L07ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
Summary of Features
•N-channel Logic Level - Enhancement mode
•Automotive AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (lead free)
•Ultra low Rds(on)
•100% Avalanche tested
Benefits
•world's lowest RDS at 75V (on) in planar technology
•highest current capability
•lowest switching and conduction power losses for highest thermal efficiency
•robust packages with superior quality and reliability
•Optimized total gate charge enables smaller driver output stages
Potential Applications
•Valves control
•Solenoids control
•Lighting
•Single-ended motors
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