Références fabricant

Infineon IAUZ N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin PQFN IAUZ40N06S5N050ATMA1

N° de stock RS:: 249-6899
Référence fabricant:: IAUZ40N06S5N050ATMA1
Fabricant:: Infineon

Infineon IAUZ N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin PQFN IAUZ40N06S5N050ATMA1

Sous-total (1 bobine de 5000 unités)*

2 270,00 €

(TVA exclue)

2 745,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 14 juin 2027

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Unité	Prix par unité	la bobine*
5000 +	0,454 €	2 270,00 €

*Prix donné à titre indicatif

N° de stock RS:: 249-6899
Référence fabricant:: IAUZ40N06S5N050ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PQFN
	Series	IAUZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 60V
	Package Type PQFN
	Series IAUZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUZ40N06S5N050ATMA1

Infineon IAUZ Series MOSFET, 60V Maximum Drain-Source Voltage, 40A Maximum Continuous Drain Current - IAUZ40N06S5N050ATMA1

This MOSFET is an N-channel enhancement device designed for high-current switching in surface-mount applications. It operates across a wide temperature range and is suitable where Compact power handling and rugged thermal tolerance are required. The device conforms to environmental restrictions and is supplied in a heat-efficient PQFN package optimised for automated placement.

Features and Benefits:

• 5mΩ Rds(on) enables reduced conduction losses
• 60V Vds supports medium-voltage power stages
• 40A continuous current handles high-load switching
• 81W power dissipation allows sustained thermal loading
• 80 nC typical gate charge facilitates predictable drive requirements

Applications

• Suitable for automotive power distribution modules
• Ideal for DC-DC converter output stages
• Used with motor drive half-bridges in Compact systems
• Can be used for synchronous rectification in power supplies
• Used for industrial switching across wide temperatures

What gate drive considerations are needed for this device?

A gate drive capable of delivering approximately 80 nC at the chosen Vgs level will ensure reliable switching timings and predictable transition losses.

How does the thermal environment affect continuous current capability?

The 81W dissipation rating requires adequate PCB thermal management and thermal vias to sustain high continuous currents without exceeding junction temperature limits.

What voltage and polarity constraints apply to the gate?

The gate must not be driven beyond ±20V relative to the source to avoid damage to the gate oxide.

What temperature range can it tolerate in industrial settings?

It is specified to operate from -55°C up to 175°C, enabling use in harsh and high-temperature environments.

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