Infineon HEXFET Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PQFN

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N° de stock RS:
168-5985
Référence fabricant:
IRFH5006TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

69nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.85mm

Standards/Approvals

No

Width

5 mm

Length

6mm

Automotive Standard

No

Pays d'origine :
CN

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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