DiodesZetex Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin PowerDI5060-8 DMT32M4LPSW-13
- N° de stock RS:
- 246-7549
- Référence fabricant:
- DMT32M4LPSW-13
- Fabricant:
- DiodesZetex
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 246-7549
- Référence fabricant:
- DMT32M4LPSW-13
- Fabricant:
- DiodesZetex
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0028Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.4mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0028Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6.4mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. Less than 1.1 mm of packaging size makes it ideal for thin applications.
Maximum drain to source voltage is 40 V and maximum gate to source voltage is ±20 V Thermally efficient package ideal for cooler running applications It offers low input capacitance
Liens connexes
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