DiodesZetex Type N-Channel MOSFET, 60 V Enhancement, 8-Pin PowerDI5060-8 DMT6011LPDW-13

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N° de stock RS:
246-7555
Référence fabricant:
DMT6011LPDW-13
Fabricant:
DiodesZetex
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Marque

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

60V

Package Type

PowerDI5060-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.022Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

22.2nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±12 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate

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