DiodesZetex Type P, Type N-Channel MOSFET, 10 A, 12 V Enhancement, 8-Pin PowerDI5060-8 DMC1018UPDWQ-13
- N° de stock RS:
- 246-7495
- Référence fabricant:
- DMC1018UPDWQ-13
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
15,40 €
(TVA exclue)
18,625 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 475 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 0,616 € | 15,40 € |
| 50 - 75 | 0,603 € | 15,08 € |
| 100 - 225 | 0,472 € | 11,80 € |
| 250 - 975 | 0,462 € | 11,55 € |
| 1000 + | 0,424 € | 10,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 246-7495
- Référence fabricant:
- DMC1018UPDWQ-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.053Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.1nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.053Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.1nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes designed to meet the stringent requirements of Automotive applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 60 V and maximum gate to source voltage is ±20 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate
Liens connexes
- DiodesZetex Type P 10 A 8-Pin PowerDI5060-8
- DiodesZetex Type P-Channel MOSFET 12 V Enhancement PowerDI5060-8 DMP3011SPSW-13
- DiodesZetex Type P-Channel MOSFET 12 V Enhancement PowerDI5060-8 DMPH33M8SPSW-13
- DiodesZetex Type P-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI5060-8 DMPH33M8SPSWQ-13
- DiodesZetex Type P-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI5060-8 DMP3021SPSW-13
- DiodesZetex Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI5060-8 DMT36M1LPS-13
- DiodesZetex Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI5060-8 DMPH4015SPSQ-13
- DiodesZetex Type P-Channel MOSFET 12 V Enhancement PowerDI5060-8
