onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V N, 5-Pin DFN-5
- N° de stock RS:
- 244-9183P
- Référence fabricant:
- NTMFS3D2N10MDT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total 10 unités (conditionné en bande continue)*
31,10 €
(TVA exclue)
37,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 53 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 10 - 99 | 3,11 € |
| 100 - 499 | 2,70 € |
| 500 - 999 | 2,38 € |
| 1000 + | 2,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-9183P
- Référence fabricant:
- NTMFS3D2N10MDT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET used as Primary Switch in Isolated DC−DC Converter, Synchronous Rectification (SR) in DC−DC and AC−DC, AC−DC Adapters (USB PD) SR, Load Switch, Hotswap, O-ring Switch, BLDC Motor and Solar Inverter. Drain−to−Source Voltage and Gate−to−Source Voltage for this MOSFET is 100 V and ±20 V respectively.
Shielded Gate MOSFET Technology
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Low QRR, Soft Recovery Body Diode
Low QOSS to Improve Light Load Efficiency
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant
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