onsemi NTM Type N-Channel Single MOSFETs, 66 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS4D7N04XMT1G
- N° de stock RS:
- 648-507
- Référence fabricant:
- NTMFS4D7N04XMT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 10 unités)*
8,36 €
(TVA exclue)
10,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 10 - 90 | 0,836 € | 8,36 € |
| 100 - 490 | 0,518 € | 5,18 € |
| 500 - 990 | 0,299 € | 2,99 € |
| 1000 + | 0,293 € | 2,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 648-507
- Référence fabricant:
- NTMFS4D7N04XMT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NTM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 38W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 6.15 mm | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NTM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 38W | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 6.15 mm | ||
Length 5.15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best in class On Resistance for motor driver application. Lower On Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Latest 40V standard gate level power MOSFET technology
Lower On resistance
Lower gate charge
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