Infineon BSC0 N-Channel MOSFET, 381 A, 60 V N, 8-Pin TDSON BSC027N06LS5ATMA1

N° de stock RS:: 241-9874
Référence fabricant:: BSC027N06LS5ATMA1
Fabricant:: Infineon

Infineon BSC0 N-Channel MOSFET, 381 A, 60 V N, 8-Pin TDSON BSC027N06LS5ATMA1

Sous-total (1 bobine de 5000 unités)*

3 705,00 €

(TVA exclue)

4 485,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 octobre 2027

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Unité	Prix par unité	la bobine*
5000 +	0,741 €	3 705,00 €

*Prix donné à titre indicatif

N° de stock RS:: 241-9874
Référence fabricant:: BSC027N06LS5ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	60V
	Series	BSC0
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 60V
	Series BSC0
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC027N06LS5ATMA1

Infineon BSC0 Series MOSFET, 60V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC027N06LS5ATMA1

This MOSFET is a high-current N-channel power transistor designed for surface-mount applications where efficient switching and thermal endurance are required in demanding temperature ranges. It operates as a logic-compatible switch for power stages, delivering substantial continuous current capability while remaining suitable for Compact board layouts and assemblies that require low on-resistance and controlled gate drive characteristics.

Features and Benefits:

• 60V drain voltage limits enable robust medium-voltage switching
• 381A continuous current delivers high sustained load capacity
• 0.7mΩ Rds(on) reduces conduction losses under heavy loads
• 81W power dissipation allows significant thermal headroom
• 80nC typical gate charge supports Faster switching with moderate drive
• 1.2V forward diode voltage minimises recovery stress during commutation

Applications

• Suitable for high-current motor driver stages on Compact boards
• Ideal for synchronous rectification in power converters
• Used with battery management systems requiring low conduction loss
• Can be used for switch stages in DC-DC power modules
• Appropriate for industrial drives operating across wide temperatures

What gate drive margin is recommended for reliable switching?

A gate drive up to the maximum 20V Vgs is permissible but typical logic-level drive should consider the 80nC gate charge when sizing the driver to achieve desired transition speeds.

How does thermal performance affect layout and cooling?

With an 81W maximum dissipation rating, board design should provide adequate copper area and thermal vias to conduct heat away from the TDSON package for sustained high-current operation.

What environmental range can it tolerate during operation?

It functions across a wide ambient span from -55°C up to +150°C, supporting designs exposed to extreme temperatures.

How does the intrinsic diode behaviour influence switching events?

The 1.2V forward diode characteristic reduces Peak reverse recovery stress during mode changes, impacting snubber and clamp requirements.