Infineon BSC0 N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON-8 FL BSC019N06NSATMA1

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3,60 €

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4,36 €

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Prix par unité
le paquet*
2 - 181,80 €3,60 €
20 - 481,51 €3,02 €
50 - 981,42 €2,84 €
100 - 1981,315 €2,63 €
200 +1,225 €2,45 €

*Prix donné à titre indicatif

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N° de stock RS:
241-9873
Référence fabricant:
BSC019N06NSATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

381A

Maximum Drain Source Voltage Vds

40V

Series

BSC0

Package Type

TDSON-8 FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC019N06NSATMA1


This MOSFET is a high-current N-channel switching device designed for surface-mount power applications where low on-resistance and fast gate response are required. It operates across a wide temperature span suitable for demanding environments and is supplied in a Compact TDSON-8 FL package for board-level integration.

Features and Benefits:


• Ultra-low Rds(on) 0.7 mΩ reduces conduction losses and heat generation
• Maximum continuous Id 381 A supports high-current delivery in systems
• Vds 40 V permits use in mid-voltage power rails and converters
• Pd 81 W enables significant power handling without immediate thermal runaway
• Qg 80 nC gate charge allows Rapid switching for dynamic loads
• Vgs 20 V gate rating affords flexible gate-drive voltages for control circuits

Applications


• Suitable for high-current synchronous rectification stages
• Ideal for power conversion in server and telecoms equipment
• Used for motor-drive half-bridges and H‑bridge configurations
• Can be used for battery management and DC-DC converters
• Used with high-power MOSFET arrays on Compact power boards

What package and mounting style does it use?


It is supplied in a TDSON-8 FL package and intended for surface mounting on PCBs.

What thermal range can it withstand in operation?


The device functions between −55 °C and 175 °C for extended environmental tolerance.

What characteristic affects switching speed and gate drive requirements?


The typical gate charge is 80 nC which determines drive current and switching transitions.

How does the forward voltage impact conduction performance?


A forward voltage of 1 V influences power loss during conduction and must be accounted for in thermal design.

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