Infineon BSC0 Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6

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Sous-total (1 bobine de 5000 unités)*

2 355,00 €

(TVA exclue)

2 850,00 €

(TVA incluse)

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Dernier stock RS
  • 5 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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la bobine*
5000 +0,471 €2 355,00 €

*Prix donné à titre indicatif

N° de stock RS:
241-9667
Référence fabricant:
BSC018NE2LSIATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

381A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO8 5 x 6

Series

BSC0

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS™ 5 N-channel power MOSFET has 25 V drain source voltage (VDS) & 153 A drain current (ID). It's ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, makes it the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. It saves overall system costs by reducing the number of phases in multiphase converters and reduce power losses and increase efficiency for all load conditions.

Optimized for high performance buck converter

Monolithic integrated schottky like diode

Very low on-resistance RDS(on)@VGS = 4.5V

100% avalanche tested

N-channel

Qualified according to JEDEC1) for target applications

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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