Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

N° de stock RS:: 239-5393
Référence fabricant:: SiR588DP-T1-RE3
Fabricant:: Vishay

Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

Sous-total (1 bobine de 3000 unités)*

1 248,00 €

(TVA exclue)

1 509,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 30 octobre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,416 €	1 248,00 €

*Prix donné à titre indicatif

N° de stock RS:: 239-5393
Référence fabricant:: SiR588DP-T1-RE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59.5A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PowerPAK SO-8
	Series	SiR588DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.008Ω
	Typical Gate Charge Qg @ Vgs	14.2nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	59.5W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	6.15mm
	Width	5.15mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59.5A
	Maximum Drain Source Voltage Vds 80V
	Package Type PowerPAK SO-8
	Series SiR588DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.008Ω
	Typical Gate Charge Qg @ Vgs 14.2nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 59.5W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 6.15mm
	Width 5.15mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiR588DP-T1-RE3

Vishay SiR588DP Series MOSFET, 80V Maximum Drain Source Voltage, 59.5A Maximum Continuous Drain Current - SiR588DP-T1-RE3

This n-channel MOSFET is a surface-mount power transistor designed to switch and handle high currents in Compact electronic assemblies. It operates across a wide temperature span and is suited to applications requiring robust voltage handling and efficient conduction in a small package.

Features and Benefits:

• 80V drain voltage enables high-voltage switching applications • 59.5A continuous drain current supports heavy-load operation • 0.008Ω low Rds(on) reduces conduction losses and heating • 14.2nC typical gate charge enables Faster switching transitions • 59.5W power dissipation allows sustained power handling • 150°C maximum operating temperature tolerates elevated thermal environments

Applications

• Suitable for motor drive stages in industrial automation systems • Ideal for high-current DC-DC converters and power supplies • Used for switching elements in power distribution modules • Can be used for load switching in HVAC and control equipment • Suitable for Compact SMD power assemblies where board space is limited

What gate voltage constraints must be observed for safe operation?

The gate-to-source voltage must be kept within ±20V to prevent gate oxide stress.

How does the package affect thermal management on a board?

The PowerPAK SO-8 8-pin surface-mount package concentrates the thermal path through the substrate, so good PCB copper area and thermal vias improve heat dissipation.

What ambient conditions define the device’s operational limits?

The device is specified for use down to -55°C and up to 150°C junction temperature for high-temperature environments.

How does the device’s forward voltage relate to conduction behaviour?

The forward voltage of 1.1V indicates the expected diode conduction drop when the intrinsic body diode conducts during reverse-recovery or hard commutation events.