Infineon CoolMOS Type N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1
- N° de stock RS:
- 236-3676
- Référence fabricant:
- IPW65R125CFD7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
9,97 €
(TVA exclue)
12,064 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 226 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 4,985 € | 9,97 € |
| 10 - 18 | 4,44 € | 8,88 € |
| 20 - 48 | 4,135 € | 8,27 € |
| 50 - 98 | 3,84 € | 7,68 € |
| 100 + | 3,54 € | 7,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-3676
- Référence fabricant:
- IPW65R125CFD7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 98W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.3mm | |
| Height | 21.5mm | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 98W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.3mm | ||
Height 21.5mm | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
Liens connexes
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