Infineon IPP Type P-Channel MOSFET, 62 A, 100 V Enhancement, 3-Pin TO-220 IPP330P10NMAKSA1
- N° de stock RS:
- 235-4861
- Référence fabricant:
- IPP330P10NMAKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
4,27 €
(TVA exclue)
5,17 €
(TVA incluse)
Ajouter 19 unités pour bénéficier d'une livraison gratuite
Stock limité
- 18 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 455 unité(s) expédiée(s) à partir du 24 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,27 € |
| 10 - 24 | 4,06 € |
| 25 - 49 | 3,89 € |
| 50 - 99 | 3,72 € |
| 100 + | 3,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-4861
- Référence fabricant:
- IPP330P10NMAKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -189nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 15.95 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -189nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 15.95 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in TO-220 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
Liens connexes
- Infineon IPP Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP330P10NMAKSA1
- Infineon IPP Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon IPP Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IPP120P04P4L03AKSA2
- Infineon IPP Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP80P03P4L04AKSA2
- Infineon IPP Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220